2N5210 npn general purpose amplifier this device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 m a to 50 ma. sourced from process 07. see 2n5088 for characteristics. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. thermal characteristics ta = 25c unless otherwise noted symbol characteristic max units 2N5210 p d total device dissipation derate above 25 c 625 5.0 mw mw/ c r q jc thermal resistanc e, j unction to case 83.3 c/w r q ja thermal resistanc e, j unction to ambient 200 c/w symbol parameter value units v ceo collector-emitter voltage 50 v v cbo collector-bas e voltage 50 v v ebo emitter-base voltage 4.5 v i c collector current - continuous 100 ma t j , t stg operating and storage j unction temperature range -55 to +150 c 2N5210 c b e to-92 discrete power & signal technologies ? 1997 fairchild semiconductor corporation
electrical characteristics ta = 25c unless otherwise noted off characteristics symbol parameter test conditions min max units v (br)ceo collector-emitter breakdown voltage i c = 1.0 ma, i b = 0 50 v v (br)cbo collector-base breakdown voltage i c = 0.1 ma, i e = 0 50 v i cbo collector cutoff current v cb = 35 v, i e = 0 50 na i ebo emitter cutoff current v eb = 3.0 v, i c = 0 50 na on characteristics h fe dc current gain i c = 100 m a, v ce = 5.0 v i c = 1.0 ma, v ce = 5.0 v i c = 10 ma, v ce = 5.0 v* 200 250 250 600 v ce( sat ) collector-emitter saturation voltage i c = 10 ma, i b = 1.0 ma 0.7 v v be( on ) base-emitter on voltage i c = 1.0 ma, v ce = 5.0 v 0.85 v small signal characteristics f t current gain - bandwidth product i c = 500 m a,v ce = 5.0 v, f= 20 mhz 30 mhz c cb collector-base capacitanc e v cb = 5.0 v, i e = 0, f = 100 khz 4.0 pf h fe small-signal current gain i c = 1.0 ma, v ce = 5.0 v, f = 1.0 khz 250 900 nf noise figure i c = 20 m a, v ce = 5.0 v, r s = 22 k w , f = 10 hz to 15.7 khz i c = 20 m a, v ce = 5.0 v, r s = 10 k w , f = 1.0 khz 2.0 3.0 db db * pulse test: pulse width 300 m s, duty cycle 2.0% npn general purpose amplifier (continued) 2N5210
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